TPCA8A02-H 2010-01-19 1 toshiba field effect transistor wi th built-in scho ttky barrier diode silicon n-channel mos type (u-mos v-h) TPCA8A02-H high efficiency dc-dc converter applications notebook pc applications portable equipment applications ? built-in a schottky barrier diode low forward voltage: v dsf = ? 0.6 v (max) ? high-speed switching ? small gate charge: q sw = 8.6 nc (typ.) ? low drain-source on-resistance: r ds (on) = 3.8 m (typ.) ? high forward transfer admittance: |y fs | = 90 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v drain-gate voltage (r gs = 20 k ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 34 drain current pulsed (note 1) i dp 102 a drain power dissipation (tc=25 ) p d 45 w drain power dissipation (t = 10 s) (note 2a) p d 2.8 w drain power dissipation (t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 150 mj avalanche current i ar 34 a repetitive avalanche energy (tc=25 ) (note 4) e ar 3.23 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy loads (e.g. the app lication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concep t and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 0.50.1 6.00.3 1.27 0.40.1 5.00.2 0.595 0.05 m a 1 4 5 8 0.150.05 0.80.1 1.10.2 4.250.2 0.60.1 3.50.2 1 4 5 8 5.00.2 0.950.05 s 0.05 s a 0.1660.05 jedec ? jeita ? toshiba 2-5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6,7,8:drain
TPCA8A02-H 2010-01-19 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc=25 ) r th (ch-c) 2.78 c/w thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 44.6 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 78.1 c/w marking (note 5) note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 0.1 mh, r g = 25 , i ar = 34 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: type tpca 8a02-h (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) lot no.
TPCA8A02-H 2010-01-19 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 100 a v (br) dss i d = 10 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 15 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.3 ? 2.3 v v gs = 4.5 v, i d = 17 a ? 4.8 6.7 drain-source on-resistance r ds (on) v gs = 10 v, i d = 17 a ? 3.8 5.3 m forward transfer admittance |y fs | v ds = 10 v, i d = 17 a 45 90 ? s input capacitance c iss ? 2640 3430 reverse transfer capacitance c rss ? 100 150 output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 610 ? pf gate resistance rg v ds = 10 v, v gs = 0 v, f = 5 mhz ? 1.0 1.5 rise time t r ? 3.6 ? turn-on time t on ? 12 ? fall time t f ? 7.7 ? switching time turn-off time t off duty 1%, t w = 10 s ? 40 ? ns v dd 24 v, v gs = 10 v, i d = 34 a ? 36 ? total gate charge (gate-source plus gate-drain) q g v dd 24 v, v gs = 5 v, i d = 34 a ? 19 ? gate-source charge 1 q gs1 ? 8.1 ? gate-drain (?miller?) charge q gd ? 4.8 ? gate switch charge q sw v dd 24 v, v gs = 10 v, i d = 34 a ? 8.6 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 102 a i dr = 1 a, v gs = 0 v ? ? 0.4 ? 0.6 v forward voltage (diode) v dsf i dr = 34 a, v gs = 0 v ? ? ? 1.2 v r l = 0.88 v dd 15 v 0 v v gs 10 v 4.7 i d = 17 a v out
TPCA8A02-H 2010-01-19 4 v gs = 2.7 v 4.5 5 4 8 10 3.0 3.2 3.4 3.6 v gs = 2.7 v 2.9 3.1 3.2 3.3 3.4 3.5 4 4.5 10 5 8 0.1 1 10 10 1 4.5 v 100 v gs = 10 v 25 0.1 100 1 10 ta = ? 55c 100 0.1 1000 10 1 100 0 0.4 0.2 0.1 0.3 02 10 46 8 8.5 17 i d = 34 a 0 60 12 36 24 48 1 0 5 2 3 4 ta = ? 55c 25 100 forward transfer admittance |y fs | (s) drain-source voltage v ds (v) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) ? y fs ? ? i d drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 100 20 60 40 80 1 0 5 23 4 common source ta = 25c pulse test 0 50 10 30 20 40 0.2 1 0.4 0.6 0.8 common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test
TPCA8A02-H 2010-01-19 5 50 10 30 40 0 0 20 4 8 12 0 v dd = 6 v v ds 20 30 50 10 12 24 20 40 16 2.5 1.5 0.5 0 ? 80 0 40 80 120 160 ? 40 2.0 1.0 10000 1000 1 0.1 100 10 c iss c oss c rss 100 10 10 4.5 v gs = 0 v 3 ? 0.2 0 ? 1.0 ? 0.6 ? 0.4 ? 0.8 100 10 1 1 0 12 9 3 ? 40 ? 80 160 0 40 80 120 v gs = 4.5 v v gs = 10 v i d = 8.5 a,17 a,34 a i d = 8.5 a 17 a 34 a 6 gate-source voltage v gs (v) ambient temperature ta (c) dynamic input/output characteristics total gate charge q g (nc) drain-source voltage v ds (v) gate threshold voltage v th (v) ambient temperature ta (c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) v th ? ta common source pulse test common source ta = 25c pulse test common source v gs = 0 v f = 1 mhz ta = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 34 a ta = 25c pulse test
TPCA8A02-H 2010-01-19 6 v dss max t =1 ms * t =10 ms * 1 0.0001 10 100 1000 0.01 0.1 1 10 100 1000 (2) (1) 0.01 (3) 0.1 0.001 safe operating area drain-source voltage v ds (v) drain current i d (a) r th ? t w pulse width t w (s) transient thermal impedance r th ( /w) ambient temperature ta (c) p d ? ta drain power dissipation p d (w) case temperature tc (c) p d ? tc drain power dissipation p d (w) 50 0 0 40 80 120 30 40 160 20 10 0.1 1000 1 10 100 100 0.1 10 1 single-pulse ta = 25c curves must be derated linearly with increase in temperature. i d max (pulse) * single - pulse (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (3) tc = 25 3 0 0 40 80 120 2 2.5 160 1 0.5 (1) (2) 1.5 (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t = 10 s
TPCA8A02-H 2010-01-19 7 0 80 160 120 40 0 10 20 40 30 60 140 100 20 pulse test v gs = 0 v 160 10000 1000 100 10 100000 0 80 120 40 v ds = 30 v 20 5 10 ta = 25c 75 125 100 10 1 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1 pulse test v gs = 0 v i dr ? v dsf i dss ? tch (typ.) tch ? v ds drain-source voltage v ds (v) channel temperature tch (c) drain-source voltage v dsf (v) drain reverse current i dr (a) channel temperature tch (c) drain cutoff current i dss ( a) pulse test v gs = 0 v
TPCA8A02-H 2010-01-19 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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